A 3dB NF 0.1–6.6GHz inductorless wideband low-noise amplifier in 0.13µm CMOS

Author

Asaad Wahba Marzouk, Shery ; Hussien, Faisal A. ; Shousha, A.M.

Author_Institution

Dept. of Electron. & Electr. Commun. Eng., Cairo Univ., Cairo, Egypt

fYear

2014

fDate

3-6 Aug. 2014

Firstpage

953

Lastpage

956

Abstract

An inductorless wideband LNA is designed with low NF and high linearity. It is based on the use of both passive and active feedback with current reuse techniques to achieve the required low NF, high BW, and suitable gain. An auxiliary transistor is added to the differential implementation to achieve a high linearity. The circuit is designed in 0.13μm TSMC technology and exhibits a gain of 18.4dB over an entire bandwidth of 6.6GHz. Across the whole band of interest, the NF does not exceed 3dB, while the IIP3 is maintained above 6dBm, and it consumes 13.4mW DC power from a 1.5V supply.

Keywords

CMOS analogue integrated circuits; MMIC amplifiers; UHF amplifiers; circuit feedback; field effect MMIC; low noise amplifiers; wideband amplifiers; IIP3; TSMC CMOS technology; active feedback; auxiliary transistor; current reuse techniques; frequency 0.1 GHz to 6.6 GHz; inductorless wideband LNA; inductorless wideband low-noise amplifier; low NF; noise figure 3 dB; passive feedback; power 13.4 mW; size 0.13 mum; voltage 1.5 V; CMOS integrated circuits; Linearity; Low-noise amplifiers; Noise; Noise measurement; Transistors; Wideband; high linearity; inductorless; wideband LNA;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2014 IEEE 57th International Midwest Symposium on

Conference_Location

College Station, TX

ISSN

1548-3746

Print_ISBN

978-1-4799-4134-6

Type

conf

DOI

10.1109/MWSCAS.2014.6908574

Filename

6908574