Title :
Study on an effect of nitrogenation on microstructure properties of hydrogenated amorphous carbon films
Author :
Xingfu, Rong ; Zhiyu, Qin
Author_Institution :
Coll. of Mech. Eng., Taiyuan Univ. of Technol., China
Abstract :
The effect of nitrogen incorporation on the microstructure properties of hydrogenated amorphous carbon (a-C:H:N) films prepared by rf sputtering of a graphite target in different Ar-H2-N2 atmospheres was investigated by means of photoluminescence and transmittance and reflectance studies. It is found that lower nitrogenation concentration facilitates sp3 bonds and saturates some dangling bonds, so that the photoluminescence peaks shift toward the higher energy side (blue shift) and photoluminescence efficiency increases. At the condition of higher nitrogen dilution, the photoluminescence peaks shift to the lower energy side and photoluminescence efficiency decreases with increasing nitrogen dilution. This might be correlated with the formation of larger size sp 2 clusters as well as with the increasing number of nonradiative recombination centers. An anti-Stokes luminescence phenomenon was observed in a-C:H:N films
Keywords :
amorphous state; carbon; dangling bonds; hydrogen; insulating thin films; nitridation; nitrogen; nonradiative transitions; photoluminescence; reflectivity; spectral line shift; sputtered coatings; Ar-H2-N2; Ar-H2-N2 atmospheres; C:H,N; N incorporation; a-C:H,N films; antiStokes luminescence phenomenon; blue shift; dangling bond saturation; microstructure properties; nitrogenation effect; nonradiative recombination centers; photoluminescence; photoluminescence efficiency; photoluminescence peak shift; reflectance; rf sputtering; sp2 clusters; sp3 bonds; transmittance; Amorphous materials; Argon; Atmosphere; Doping; Fluid flow; Mechanical factors; Microstructure; Nitrogen; Optical films; Photoluminescence;
Conference_Titel :
Properties and Applications of Dielectric Materials, 2000. Proceedings of the 6th International Conference on
Conference_Location :
Xi´an
Print_ISBN :
0-7803-5459-1
DOI :
10.1109/ICPADM.2000.876178