Title :
Benchmarking of low band gap III-V based-HEMTs and sub-100nm CMOS under low drain voltage regime
Author :
Bollaert, Sylvain ; Desplanque, Ludovic ; Wallart, Xavier ; Roelens, Yannick ; Malmkvist, Mikael ; Borg, Malin ; Lefebvre, Eric ; Grahn, Jan ; Smith, Derek ; Dambrine, Gilles
Author_Institution :
Inst. of Electron.,Microelectron. & Nanotechnol.,, Villeneuve-d´´Ascq
Abstract :
this works reports on speed and high performance benchmarking of low band gap III-V based-HEMTs versus advanced n-MOSFET in low drain voltage regime (few kT/q). In this low bias condition, figure of merits such as, fT are higher and intrinsic gate delay and energy are almost one order of magnitude lower in the case of III-V based-devices (two orders of magnitude for the delay-energy product).
Keywords :
CMOS integrated circuits; III-V semiconductors; MOSFET; high electron mobility transistors; advanced n-MOSFET; intrinsic gate delay; low band gap III-V based-HEMT; Delay; Energy consumption; Fabrication; Frequency; HEMTs; III-V semiconductor materials; Low voltage; MOSFET circuits; Microelectronics; Photonic band gap;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412637
