Title :
Characterization of insulated-gate versus schottky-gate InAs/AlSb HEMTs
Author :
Malmkvist, Mikael ; Lefebvre, Eric ; Borg, Malin ; Desplanque, Ludovic ; Wallart, Xavier ; Dambrine, Gilles ; Bollaert, Sylvain ; Grahn, Jan
Author_Institution :
Chalmers Univ. of Technol., Goteborg
Abstract :
Fabrication and characterization of 225 nm gate-length InAs/AlSb HEMTs with excellent RF performance are reported. We show the importance of an insulating layer between the gate and the semiconductor to improve gm, fT and fmax, and most important from a noise perspective, the gate-leakage current IG. By using an insulated-gate, IG was reduced by two orders of magnitude. The insulated-gate HEMTs exhibited extrinsic fT and fmax of 155 GHz and 115 GHz, respectively, at VDS=0.5 V.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; antimony compounds; arsenic compounds; high electron mobility transistors; indium compounds; leakage currents; millimetre wave field effect transistors; InAs-AlSb; Schottky-gate HEMT; frequency 115 GHz; frequency 155 GHz; gate-leakage current; insulating layer; noise perspective; Dry etching; Fabrication; Gold; HEMTs; Insulation; Intrusion detection; MODFETs; Noise reduction; Semiconductor device noise; Wet etching;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412638
