Characterization of insulated-gate versus schottky-gate InAs/AlSb HEMTs

Author

Malmkvist, Mikael ; Lefebvre, Eric ; Borg, Malin ; Desplanque, Ludovic ; Wallart, Xavier ; Dambrine, Gilles ; Bollaert, Sylvain ; Grahn, Jan

Author_Institution

Chalmers Univ. of Technol., Goteborg

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

24

Lastpage

27

Abstract

Fabrication and characterization of 225 nm gate-length InAs/AlSb HEMTs with excellent RF performance are reported. We show the importance of an insulating layer between the gate and the semiconductor to improve g_m, f_T and f_max, and most important from a noise perspective, the gate-leakage current I_G. By using an insulated-gate, I_G was reduced by two orders of magnitude. The insulated-gate HEMTs exhibited extrinsic f_T and f_max of 155 GHz and 115 GHz, respectively, at V_DS=0.5 V.

Keywords

III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; antimony compounds; arsenic compounds; high electron mobility transistors; indium compounds; leakage currents; millimetre wave field effect transistors; InAs-AlSb; Schottky-gate HEMT; frequency 115 GHz; frequency 155 GHz; gate-leakage current; insulating layer; noise perspective; Dry etching; Fabrication; Gold; HEMTs; Insulation; Intrusion detection; MODFETs; Noise reduction; Semiconductor device noise; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-002-6

Type

conf

DOI

10.1109/EMICC.2007.4412638

Filename

4412638