Title :
Current gain collapse in HBTs analysed by transient interferometric mapping method
Author :
Bychikhin, Sergey ; Dubec, Viktor ; Kuzmik, Jan ; Würfl, Joachim ; Kurpas, Paul ; Teyssier, Jean-Pierre ; Pogany, Dionyz
Author_Institution :
Vienna Univ. of Technol., Vienna
Abstract :
Thermal distribution during a current gain collapse event is investigated in multi-finger InGaP/GaAs HBTs using the transient interferometric mapping method. The onset of the collapse is observed at time of about 1ms in devices with a low emitter ballasting resistance RE, while for HBTs with a high RE, the current is distributed equally over the fingers. 3D thermal simulation supports the results and allows an estimation of temperature at which the collapse occurs.
Keywords :
II-VI semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; interferometry; 3D thermal simulation; HBT; InGaP-GaAs; current gain collapse; heterojunction bipolar transistors; thermal distribution; transient interferometric mapping method; Electronic ballasts; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Laser beams; Performance evaluation; Probes; Temperature distribution; Thermal resistance; Transient analysis;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412639
