Current gain collapse in HBTs analysed by transient interferometric mapping method

Author

Bychikhin, Sergey ; Dubec, Viktor ; Kuzmik, Jan ; Würfl, Joachim ; Kurpas, Paul ; Teyssier, Jean-Pierre ; Pogany, Dionyz

Author_Institution

Vienna Univ. of Technol., Vienna

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

28

Lastpage

31

Abstract

Thermal distribution during a current gain collapse event is investigated in multi-finger InGaP/GaAs HBTs using the transient interferometric mapping method. The onset of the collapse is observed at time of about 1ms in devices with a low emitter ballasting resistance R_E, while for HBTs with a high R_E, the current is distributed equally over the fingers. 3D thermal simulation supports the results and allows an estimation of temperature at which the collapse occurs.

Keywords

II-VI semiconductors; gallium arsenide; heterojunction bipolar transistors; indium compounds; interferometry; 3D thermal simulation; HBT; InGaP-GaAs; current gain collapse; heterojunction bipolar transistors; thermal distribution; transient interferometric mapping method; Electronic ballasts; Fingers; Gallium arsenide; Heterojunction bipolar transistors; Laser beams; Performance evaluation; Probes; Temperature distribution; Thermal resistance; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-002-6

Type

conf

DOI

10.1109/EMICC.2007.4412639

Filename

4412639