Title :
Design of a low VSWR harmonics, low loss SP6T switch for GSM/Edge applications.
Author :
Prikhodko, D. ; Tkachenko, Y. ; Sprinkle, S. ; Carter, R. ; Nabokin, S. ; Chiesa, J.
Author_Institution :
Skyworks Solutions Inc., Woburn
Abstract :
In this paper the design and measurement of a high performance SP6T GaAs pHEMT switch for Quad-Band GSM/EDGE Front-Ends are discussed. The design uses a novel approach to reduce the generated harmonic levels at 3 V supply, 35 dBm drive and antenna VSWR of 5:1 down to -40 dBm, the lowest levels for the multi-mode multi-throw switches reported to date. Besides low harmonic performance, low TX insertion loss of below 0.5 dB at 2 GHz and RX insertion loss of below 1 dB at 2 GHz is achieved.
Keywords :
field effect transistor switches; gallium arsenide; harmonic analysis; GSM/Edge applications; RX insertion loss; VSWR harmonics; harmonic performance; pHEMT switch; Distributed control; GSM; Insertion loss; PHEMTs; Performance loss; Personal communication networks; Power harmonic filters; Radio frequency; Switches; Voltage;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412640
