DocumentCode :
2524217
Title :
Growth kinetics of boride layer by molten salt electrodeposition
Author :
Yang, Haili ; He, Ning ; Tang, Guozhang ; Li, Yungang ; Zhang, Yuzhu
Author_Institution :
Hebei Key Lab. of Modern Metall. Technol., Hebei Polytech. Univ., Tangshan, China
fYear :
2010
fDate :
10-12 Sept. 2010
Firstpage :
323
Lastpage :
326
Abstract :
The boride layer on silicon steel sheet was obtained by electrodeposition in KCl-NaCl-NaF-Na2B4O7 molten salt at 1023, 1073 and 1123K for 15, 30, 45, 60, 90 and 120 min. The types of borides formed were analyzed by X-ray diffraction analysis (XRD). The distribution of the elements of boride layer was measured using the glow discharge spectrometry (GDS) and the depth from the surface to the substrate was taken as the layer thickness. It was found that the longer boronizing time resulted in an increase in thickness layer and the thickness of boride layers ranged from 15 to 172 μm. Depending on boronizing time, these layers can be single, double or three phase of FeB, Fe2B and α-Fe. Layer growth kinetics was analyzed by measuring the thickness as a function of treatment time and temperature. Kinetic studies showed a parabolic relationship between layer thickness and process time, and the activation energy was 223 kJ/mol.
Keywords :
X-ray diffraction; electrodeposition; iron compounds; steel; surface hardening; Fe2B; FeB; FeCSiJk; X-ray diffraction analysis; XRD; activation energy; boride layer; boronizing time; double phase; element distribution; glow discharge spectrometry; layer growth kinetics; layer thickness; molten salt electrodeposition; parabolic relationship; process time; silicon steel sheet; single phase; size 15 mum to 172 mum; temperature 1023 K; temperature 1073 K; temperature 1123 K; three phase; time 120 min; time 15 min; time 30 min; time 45 min; time 60 min; time 90 min; treatment temperature; treatment time; Annealing; Cathodes; Ink; Silicon; Boride layer; Electrodeposition; Growth kinetics; Molten salt;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Mechanical and Electrical Technology (ICMET), 2010 2nd International Conference on
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-8100-2
Electronic_ISBN :
978-1-4244-8102-6
Type :
conf
DOI :
10.1109/ICMET.2010.5598373
Filename :
5598373
Link To Document :
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