An enhanced HSPICE macromodel of a PCM cell with threshold switching and recovery behavior

Author

Linbin Chen ; Lombardi, Floriana ; Jie Han

Author_Institution

Electr. & Comput. Eng. Dept., Northeastern Univ., Boston, MA, USA

fYear

2014

fDate

3-6 Aug. 2014

Firstpage

993

Lastpage

996

Abstract

This paper proposes a new macromodel that takes into account the threshold switching and the resistance recovery processes in addition to the drift behavior of a Phase Change Memory (PCM). Simulation results are provided for both DC and drift behaviors; they show that the proposed macromodel is very accurate at a small error when compared with data from experimental devices. A sensitivity analysis of the macromodel is also performed to show its operation with respect to parameter variations. The model is suitable for circuit design based on PCM devices.

Keywords

SPICE; integrated circuit modelling; phase change memories; sensitivity analysis; DC behaviors; PCM cell; circuit design; drift behavior; enhanced HSPICE macromodel; parameter variations; phase change memory; recovery behavior; resistance recovery processes; sensitivity analysis; threshold switching; Phase change materials; Phase change memory; Programming; Resistance; Switches; Threshold voltage; Transient analysis; Phase-change memory; drift; modeling; recovery; threshold switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems (MWSCAS), 2014 IEEE 57th International Midwest Symposium on

Conference_Location

College Station, TX

ISSN

1548-3746

Print_ISBN

978-1-4799-4134-6

Type

conf

DOI

10.1109/MWSCAS.2014.6908584

Filename

6908584