Title :
Improvement of silicon dioxide integrity against hole-related breakdown with the incorporation of foreign atoms: molecular orbital examination
Author :
Maruizumi, Takuya ; Ushio, Jiro ; Takemura, Yoshiaki ; Miyao, Masanobu
Author_Institution :
Central Res. Lab., Hitachi Ltd., Kokubunji, Japan
Abstract :
The mechanism for the improvement of gate oxide integrity through the incorporation of nitrogen atoms was examined in terms of molecular orbital theory by considering the chemical bond changes that accompany hole trapping and which cause degradation of the oxide. We found that the robustness against hot-hole injection was significantly improved by the formation of the N≡Si3 structure in the oxide
Keywords :
MIS devices; PM3 calculations; bonds (chemical); dielectric thin films; hole traps; nitrogen; semiconductor device breakdown; semiconductor device reliability; silicon compounds; SiO2; chemical bond changes; foreign atoms; hole trapping; hole-related breakdown; hot-hole injection; molecular orbital examination; oxide degradation; oxide integrity; robustness; Bonding; Chemicals; Electric breakdown; Electron traps; Nitrogen; Orbital calculations; Photonic band gap; Semiconductor films; Silicon compounds; Solid modeling;
Conference_Titel :
Conduction and Breakdown in Solid Dielectrics, 1998. ICSD '98. Proceedings of the 1998 IEEE 6th International Conference on
Conference_Location :
Vasteras
Print_ISBN :
0-7803-4237-2
DOI :
10.1109/ICSD.1998.709274
