A simplified, empirical large-signal model for SiC MESFETs

Author

Yuk, Kelvin ; Branner, G.R.

Author_Institution

Univ. of California, Davis

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

44

Lastpage

47

Abstract

A new, simplified empirical large-signal model for high power microwave SiC MESFFTs is presented. A generalized drain current source equation is developed, allowing close predictions of both pulsed and static IV characteristics, which vary significantly due to current dispersion. Thv drain current source is based on pulsed IV measurements and accurately predicts the gm and gds without supplemental RF current source generators as typically used in other models. The model is shown to accurately predict the output and input reflected power over an available power range of +10dBm to +36dBm for three harmonics while maintaining the ability to compute the small-signal S-parameters.

Keywords

constant current sources; microwave field effect transistors; power MESFET; silicon compounds; wide band gap semiconductors; MESFET; current dispersion; generalized drain current source equation; large-signal model; pulsed IV measurements; small-signal S-parameters; Current measurement; Current supplies; Equations; MESFETs; Power system harmonics; Predictive models; Pulse generation; Pulse measurements; Radio frequency; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-002-6

Type

conf

DOI

10.1109/EMICC.2007.4412643

Filename

4412643