Photon emission from SOI MOSFET with body terminal

The impact ionization phenomenon in SOI MOSFET is investigated by evaluating the photon emission characteristics and the body terminal current in the devices with body terminal. It is clearly shown by measuring them simultaneously that the body terminal current in SOI MOSFET indicates only a part of impact ionization current in the depletion mode and furthermore the silicon film potential is changed along the channel width by the body terminal in the accumulation mode. In addition, it is found that the impact ionization occurs both at the front surface and the back surface of the silicon film in the depletion mode. The impact ionization at the back surface is observed at the lower gate voltage than that at the front surface.<>