Title :
A 140-GHz monolithic low noise amplifier
Author :
Wang, H. ; Lai, R. ; Lo, D.C.W. ; Streit, D.C. ; Pospieszalski, M.W. ; Berenz, J.
Author_Institution :
Electron. Syst. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
Abstract :
This paper presents the highest frequency MMIC amplifier ever reported using three terminal devices. It demonstrates a gain performance of 9 dB at 142 GHz for a two-stage design, which is in line of current InP-based high electron mobility transistor (HEMT) technology.<>
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC amplifiers; indium compounds; integrated circuit noise; 142 GHz; 9 dB; HEMT; InP; InP-based high electron mobility transistor; MMIC amplifier; gain performance; monolithic low noise amplifier; three terminal devices; two-stage design; Costs; Frequency; HEMTs; Indium gallium arsenide; Integrated circuit noise; Low-noise amplifiers; MMICs; Performance gain; Radiofrequency amplifiers; Space technology;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383259
