Title :
Low-frequency dynamic drain current modeling in AlGaN-GaN HEMTs
Author :
Giacomo, V. Di ; Santarelli, A. ; Filicori, F. ; Raffo, A. ; Vannini, G. ; Aubry, R. ; Gaquière, C.
Author_Institution :
Eerrara Univ., Eerrara
Abstract :
Low-frequency dispersive effects in AlGaN/GaN HEMTs are here modeled above their cutoff frequencies by adopting a modeling approach developed for GaAs PHEMTs. To this aim, a new identification procedure is proposed, which allows to obtain very accurate predictions of the pulsed drain currents, even in the presence of strong kink effects in the DC characteristics. In addition, a dedicated algorithm of data extrapolation is used, in order to make the model more computationally efficient.
Keywords :
III-VI semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; AlGaN-GaN; AlGaN-GaN HEMT; GaAs; data extrapolation; low-frequency dispersive effects; low-frequency dynamic drain current; Aluminum gallium nitride; Computational modeling; Cutoff frequency; Dispersion; Extrapolation; Gallium arsenide; Gallium nitride; HEMTs; MODFETs; PHEMTs;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412649
