Defect detection with transient current testing and its potential for deep sub-micron CMOS ICs

Author

Sachdev, Manoj ; Janssen, Peter ; Zieren, Victor

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1998

fDate

18-23 Oct 1998

Firstpage

204

Lastpage

213

Abstract

Transient current testing (I_DDT) has been often cited as an alternative and/or supplement to I_DDQ testing. In this article we investigate the potential of transient current testing in faulty, chip detection with silicon devices. The effectiveness of the I _DDT test method is compared with I_DDQ as well as with SA-based voltage testing. Photon emission microscopy is used to localize defects in several faulty, devices. Furthermore, the potential of I_DDT testing for leaky deep sub-micron devices is investigated

Keywords

CMOS digital integrated circuits; VLSI; electric current measurement; elemental semiconductors; integrated circuit testing; silicon; transients; I_DDQ testing; SA-based voltage testing; Si; Si devices; deep sub-micron CMOS IC; defect detection; effectiveness; leaky deep sub-micron devices; photon emission microscopy; transient current testing; Circuit faults; Circuit testing; Current measurement; Logic testing; Silicon; Switches; Variable structure systems; Velocity measurement; Very large scale integration; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Test Conference, 1998. Proceedings., International

Conference_Location

Washington, DC

ISSN

1089-3539

Print_ISBN

0-7803-5093-6

Type

conf

DOI

10.1109/TEST.1998.743153

Filename

743153