Accurate modeling of GaAs MESFET sidegating effects by trapping simulation

Author

Yi Liu ; Zhiping Yu ; Dutton, R.W. ; Deal, M.D.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

911

Lastpage

914

Abstract

In this paper, GaAs MESFET sidegating effects are studied by experiment and analysis of carrier trapping process in semi-insulating (SI) GaAs substrates using a trapping model. Two mechanisms responsible for sidegating are revealed. One is the formation of a stationary Gunn domain at the channel-substrate interface. The other is the substrate conduction between a parasitic Schottky contact and the sidegate due to carrier injection.<>

Keywords

Gunn effect; III-V semiconductors; Schottky gate field effect transistors; electron mobility; electron traps; gallium arsenide; semiconductor device models; simulation; GaAs; MESFET; carrier injection; carrier trapping process; channel-substrate interface; modeling; parasitic Schottky contact; semiinsulating GaAs substrates; sidegating effects; stationary Gunn domain; substrate conduction; trapping simulation; Charge carrier processes; Doping; Electron traps; Energy capture; Energy states; Gallium arsenide; MESFETs; Schottky barriers; Threshold voltage; Virtual manufacturing;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383265

Filename

383265