Title :
An extremely low-noise InP-based HEMT with silicon nitride passivation
Author :
Ming-Yih Kao ; Duh, K.H.G. ; Pin Ho ; Pane-Chane Chao
Author_Institution :
Martin Marietta Lab., Martin Marietta Corp., Syracuse, NY, USA
Abstract :
This paper presents the fabrication, DC, pulsed I-V characteristics, and noise performance of a silicon nitride passivated InP-based high electron mobility transistor (HEMT). At 63 GHz, the 0.1 /spl mu/m gate length passivated HEMT had a minimum noise figure of 0.8 dB and an associated gain of 7.6 dB. Also, an unpassivated transistor fabricated on the same epitaxial wafer exhibited a record 0.7 dB noise figure with an associated gain of 8.6 dB at 62 GHz. These results are the best V-band low noise performance reported for both passivated and unpassivated devices.<>
Keywords :
III-V semiconductors; high electron mobility transistors; indium compounds; microwave field effect transistors; millimetre wave field effect transistors; passivation; semiconductor device noise; 0.1 micron; 0.7 dB; 0.8 dB; 62 GHz; 63 GHz; 7.6 dB; 8.6 dB; DC characteristics; InAlAs-InGaAs-InP; InP; InP-based HEMT; MM-wave device; Si/sub 3/N/sub 4/; V-band low noise performance; extremely low-noise device; fabrication; high electron mobility transistor; microwave performance; nitride passivation; pulsed I-V characteristics; Fabrication; HEMTs; Indium compounds; Indium phosphide; Microwave devices; Noise figure; Passivation; Plasma temperature; Silicon; Substrates;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383266
