Title :
A 3.6 GHz dual modulus prescaler IC using optimal pseudomorphic HEMT structure on Si substrates
Author :
Suehiro, H. ; Ohori, T. ; Nakasha, Y. ; Miyata, T. ; Watanabe, Y. ; Kuroda, S. ; Takikawa, M.
Author_Institution :
Fujitsu Labs. Ltd., Atsugi, Japan
Abstract :
A dual modulus divide-by-128 or 129 prescaler IC was fabricated using 0.35 /spl mu/m gate-length HEMT DCFL technology on a Si substrate. We optimized the HEMT epitaxial structure so that it consisted of a Si-doped InAlGaAs-AlGaAs (5/5 nm) strained layer superlattice (SLS), an InGaAs pseudomorphic channel layer, an SLS buffer layer and a GaAs buffer layer grown by MOVPE. Our prescaler IC on a Si substrate gives 3.6 GHz/9.8 mW at a supply voltage of 1.5 V.<>
Keywords :
HEMT integrated circuits; direct coupled FET logic; field effect logic circuits; gallium arsenide; integrated circuit technology; large scale integration; prescalers; scaling circuits; semiconductor superlattices; silicon; vapour phase epitaxial growth; 0.35 micron; 1.5 V; 3.6 GHz; 9.8 mW; GaAs buffer layer; GaAs-InAlGaAs:Si-AlGaAs:Si-InGaAs-GaAs-Si; HEMT DCFL technology; InGaAs pseudomorphic channel layer; MOVPE; Si; Si substrates; Si-doped superlattice; dual modulus prescaler IC; epitaxial structure; optimal pseudomorphic HEMT structure; strained layer superlattice; Buffer layers; Epitaxial growth; Epitaxial layers; Gallium arsenide; HEMTs; Indium gallium arsenide; Laser sintering; Substrates; Superlattices; Voltage;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383267
