DocumentCode
2524599
Title
Four-port transformer in silicon-based technology
Author
Hsu, Heng-Ming ; Tsai, Ming-Chang ; Huang, Kuo-Hsun
Author_Institution
Nat. Chimg-Hsing Univ., Taichung
fYear
2007
fDate
8-10 Oct. 2007
Firstpage
123
Lastpage
126
Abstract
The comprehensive characterization of 4-port transformer is paid in this paper, the contents include such as figure-of-merit, differential excitation. The coupling coefficient is added into the performance index of transformer. A foundry 90 nm CMOS technology is adopted to fabricate the 4-port transformer. Finally, an equivalent circuit is proposed to extract the model parameter in these transformers.
Keywords
CMOS integrated circuits; elemental semiconductors; silicon; transformers; CMOS technology; coupling coefficient; differential excitation; four-port transformer; silicon-based technology; CMOS technology; Coils; Coupling circuits; Inductance; Inductors; Magnetic devices; Performance analysis; Quadratic programming; Radio frequency; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location
Munich
Print_ISBN
978-2-87487-002-6
Type
conf
DOI
10.1109/EMICC.2007.4412663
Filename
4412663
Link To Document