Simultaneous dual-band high efficiency harmonic tuned power amplifier in GaN technology

Author

Colantonio, P. ; Giannini, F. ; Giofrè, R. ; Piazzon, L.

Author_Institution

Univ. of Rome Tor Vergata Via del Politecnico I, Rome

fYear

2007

fDate

8-10 Oct. 2007

Firstpage

127

Lastpage

130

Abstract

In this contribution for the first time the design of a simultaneous dual band high efficiency harmonic tuned power amplifier is presented. The active device used is a GaN HEMT with 1 mm of gate periphery. The realised amplifier operates at 2.45 Ghz and 3.3 GHz, and the measured results shown a drain efficiency of 53% and 46%, with an output power of 33 dBm and 32.5 dBm at the two hard widths. A zero transmission condition has been obtained, resulting in a measured value of S21 lower than -15 dB at 2.8 GHz.

Keywords

III-V semiconductors; UHF amplifiers; UHF field effect transistors; gallium compounds; harmonic analysis; microwave field effect transistors; microwave power amplifiers; power HEMT; GaN; HEMT; dual-band high efficiency harmonic tuned power amplifier; frequency 2.8 GHz; frequency 3.3 GHz; zero transmission condition; Bandwidth; Dual band; Frequency; Gallium nitride; High power amplifiers; Impedance matching; Power amplifiers; Power harmonic filters; Power system harmonics; Voltage control;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European

Conference_Location

Munich

Print_ISBN

978-2-87487-002-6

Type

conf

DOI

10.1109/EMICC.2007.4412664

Filename

4412664