DocumentCode
2524682
Title
Simulation of advanced field isolation using calibrated viscoelastic stress analysis
Author
Senez, V. ; Collard, D. ; Ferreira, P. ; Baccus, B.
Author_Institution
IEMN-ISEN, Lille, France
fYear
1994
fDate
11-14 Dec. 1994
Firstpage
881
Lastpage
884
Abstract
A physical two-dimensional modeling of the thermal oxidation of silicon has been developed based on the explicit treatment of the reaction expansion. The stress-dependent viscoelastic behavior is fully calibrated. The prediction capabilities are demonstrated by calculations of oxide shapes and oxidation-induced stresses in silicon substrate for very advanced isolation techniques.<>
Keywords
elemental semiconductors; internal stresses; isolation technology; oxidation; semiconductor process modelling; silicon; viscoelasticity; Si; advanced field isolation; calibrated viscoelastic stress analysis; oxidation-induced stresses; oxide shapes; reaction expansion; stress-dependent viscoelastic behavior; thermal oxidation; two-dimensional modeling; Analytical models; Calibration; Elasticity; Flowcharts; Oxidation; Shape; Silicon; Temperature distribution; Thermal stresses; Viscosity;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-2111-1
Type
conf
DOI
10.1109/IEDM.1994.383272
Filename
383272
Link To Document