Title :
An advanced calibration method for modelling oxidation and mechanical stress in sub-micron CMOS isolation structures
Author :
Jones, S.K. ; Poncet, A. ; De Wolf, I. ; Ahmed, M.M. ; Rothwell, W.J.
Author_Institution :
GEC-Marconi Mater. Technol. Ltd., Towcester, UK
Abstract :
A new approach is to provide accurate simulation of both oxidation topography and mechanical stress in LOCOS-derived isolation structures forecast for 0.25 /spl mu/m CMOS is presented. Advanced modelling and characterisation have been used to calibrate 2D oxidation and stress analysis models with account of the measurement instrumental response function. A revision to the mechanical properties of thin nitride and oxide layers is proposed to explain the results.<>
Keywords :
CMOS integrated circuits; calibration; integrated circuit measurement; integrated circuit technology; internal stresses; isolation technology; oxidation; 0.25 micron; 2D oxidation; LOCOS-derived isolation; advanced calibration method; measurement instrumental response function; mechanical stress; oxidation; oxidation topography; stress analysis models; sub-micron CMOS isolation structures; CMOS technology; Calibration; Instruments; Oxidation; Semiconductor device modeling; Silicon; Spatial resolution; Stress measurement; Surfaces; Thermal stresses;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383273
