A new boron diffusion model incorporating the dislocation loop growth

A new simulation model for boron redistribution incorporating the dislocation loop growth during the post implantation annealing, is proposed. Modeling the capture of point defects and boron-interstitial silicon pair (BI) by the loop allows both the loop growth and the redistribution to be predicted simultaneously and self-consistently, on the basis of non-equilibrium BI diffusion kinetics. The physically based model, using reasonable parameters, reproduces the boron redistribution under various experimental conditions, including the results of non-equilibrium diffusion in very short time annealing after the ion implantation process.<>