DocumentCode
2524748
Title
Protection circuit for high power amplifiers operating under mismatch conditions
Author
van der Bent, G. ; van Wanum, M. ; de Hek, A.P. ; van der Graaf, M.W. ; van Vliet, F.E.
Author_Institution
TNO Defence, Hague
fYear
2007
fDate
8-10 Oct. 2007
Firstpage
158
Lastpage
161
Abstract
A protection circuit is developed which protects transistors in the output stage of a high power amplifier against voltage breakdown as a result of mismatch. The circuit is applied in an S-band and X-band High Power Amplifier and measured under various mismatch conditions. The devices have been developed in the 6-inch 0.5 mum GaAs power pHEMT process (PP50-11) of WIN Semiconductors.
Keywords
III-V semiconductors; UHF amplifiers; electric breakdown; gallium arsenide; high electron mobility transistors; microwave amplifiers; GaAs; S-band high power amplifiers; X-band high power amplifier; high power amplifiers; mismatch conditions; power pHEMT process; protection circuit; transistors; voltage breakdown; Circuit testing; Detectors; Dielectric breakdown; Gallium arsenide; High power amplifiers; PHEMTs; Protection; Resistors; Voltage control; Voltage measurement; Index Terms; MMICs; Power amplifiers; Protection;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location
Munich
Print_ISBN
978-2-87487-002-6
Type
conf
DOI
10.1109/EMICC.2007.4412672
Filename
4412672
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