Title :
Measurement of complex optical constant using terahertz ellipsometry
Author :
Nagashima, T. ; Hangyo, M.
Author_Institution :
Res. Center for Supercond. Photonics, Osaka Univ., Japan
Abstract :
We have proposed and developed "terahertz ellipsometry" in which ellipsometry is applied to time-domain spectroscopy in the THz frequency region. In this paper, the complex optical constants of highly doped semiconductors obtained by terahertz ellipsometry are shown. In addition, the incident angle dependence of the measurement precision is discussed.
Keywords :
doping profiles; elemental semiconductors; ellipsometry; heavily doped semiconductors; optical constants; phosphorus; silicon; submillimetre wave measurement; submillimetre wave spectroscopy; P-doped Si wafers; Si:P; THz frequency region; complex optical constant measurement; highly doped semiconductors; incident angle dependence; measurement precision; terahertz ellipsometry; time-domain spectroscopy; Antenna measurements; Delay effects; Ellipsometry; Optical pulse generation; Optical pulses; Optical reflection; Phase measurement; Position measurement; Pulse measurements; Submillimeter wave measurements;
Conference_Titel :
Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7423-1
DOI :
10.1109/ICIMW.2002.1076176
