DocumentCode
2524773
Title
Electrical characterization of GaN thin films using terahertz-time domain spectroscopy
Author
Nagashima, T. ; Takata, K. ; Hangyo, M.
Author_Institution
Res. Center for Supercond. Photonics, Osaka Univ., Japan
fYear
2002
fDate
26-26 Sept. 2002
Firstpage
247
Lastpage
248
Abstract
We demonstrate noncontact measurements of electrical properties of GaN thin films using the time domain spectroscopy in the THz frequency region (THz-TDS). The carrier density and temperature dependence of DC resistivity and mobility of the GaN films are investigated.
Keywords
III-V semiconductors; carrier density; carrier mobility; electrical resistivity; gallium compounds; infrared spectroscopy; semiconductor thin films; submillimetre wave measurement; submillimetre wave spectroscopy; wide band gap semiconductors; DC resistivity temperature dependence; GaN; GaN thin films; THz frequency region; THz-TDS; carrier density; electrical characterization; electrical properties; mobility temperature dependence; noncontact measurements; terahertz-time domain spectroscopy; Conductivity; Electric variables measurement; Electromagnetic measurements; Frequency; Gallium nitride; Optical films; Optical pulses; Semiconductor films; Spectroscopy; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on
Conference_Location
San Diego, CA, USA
Print_ISBN
0-7803-7423-1
Type
conf
DOI
10.1109/ICIMW.2002.1076177
Filename
1076177
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