Title :
X-Band 11W AlGaN/GaN HEMT power MMICs
Author :
Chen, Tangsheng ; Zhang, Bin ; Jiao, Gang ; Ren, Chunjiang ; Chen, Chen ; Shao, Kai ; Yang, Naibin
Author_Institution :
Nat. Key Lab. of Monolithic Integrated Circuits & Modules, Nanjing
Abstract :
AIGaN/GaN HEMT power MIMIC which is designed in microstrip technology on Sl-SiC substrate is presented in this work. The chip size is only 2.0 mmtimes1.1 mmtimes0.08 mm. The developed two-stage power MMIC operates at frequency between 9.4-10.6 GHz and delivers a pulsed output power of 11.1 W at 9.7 GHz under a drain bias of 30 V. The linear gain of the MMIC is about 10 dB which is much lower than the simulated value of 15 dB. Further optimization of the MMIC processing and circuit design is necessary to improve the performances of the MMIC.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC power amplifiers; aluminium compounds; gallium compounds; power HEMT; AlGaN-GaN; HEMT power MMIC; MMIC processing; circuit design; frequency 8 GHz to 12 GHz; microstrip technology; power 11 W; Aluminum gallium nitride; Circuit simulation; Design optimization; Frequency; Gain; Gallium nitride; HEMTs; MMICs; Microstrip; Power generation; AlGaN/GaN; HEMT; Index Terms; MMICs; Microstrip Technology; X-Band;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412673
