Two-dimensional transient enhanced diffusion and its impact on bipolar transistors

Author

van Dort, M.J. ; van der Wel, W. ; Slotboom, J.W. ; Cowern, N.E.B. ; Knuvers, M.P.G. ; Lifka, H. ; Zalm, P.C.

Author_Institution

Philips Res. Lab., Eindhoven, Netherlands

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

865

Lastpage

868

Abstract

The impact of transient-enhanced diffusion (TED) and oxidation-enhanced diffusion (OED) on the device performance of advanced Si devices has long been recognized. The short-channel behaviour of MOSFET´s is for instance known to be affected. Experimental studies of TED have almost exclusively been restricted to one-dimensional cases, but a full two-dimensional analysis of TED is mandatory to evaluate its impact on device performance. In this paper we present a detailed experimental study of 2D TED for low-dose and high-dose implantations. Furthermore, for the first time the impact of 2D TED due to the external base implantations on the electrical behaviour of single-poly bipolar transistors in a BiCMOS process has been analyzed.<>

Keywords

BiCMOS integrated circuits; bipolar transistors; diffusion; elemental semiconductors; integrated circuit measurement; ion implantation; silicon; 2D TED; BiCMOS process; Si; Si device performance; electrical behaviour; external base implantations; high-dose implantations; low-dose implantations; oxidation-enhanced diffusion; short-channel behaviour; single-poly bipolar transistors; two-dimensional transient enhanced diffusion; BiCMOS integrated circuits; Bipolar transistors; Boron; Contacts; Electric variables; Gratings; Laboratories; Oxidation; Silicon; Superlattices;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383276

Filename

383276