Title :
Ku-band AlGaN/GaN HEMT with over 30W
Author :
Takagi, Kazutaka ; Kashiwabara, Yasushi ; Masuda, Kazutoshi ; Matsushita, Keiichi ; Sakurai, Hiroyuki ; Onodera, Ken ; Kawasaki, Hisao ; Takada, Yoshiharu ; Tsuda, Kunio
Author_Institution :
Toshiba Corp., Kawasaki
Abstract :
AlGaN/GaN high electron mobility transistors (HEMTs) were developed for Ku-band applications. The operating voltage characteristics in CW operating conditions were investigated. The developed AlGaN/GaN HEMT with combined two dies of 12 mm gate periphery exhibits output power of over 30 W with a power added efficiency (PAE) of 12% under VDS = 30 V, CW operating condition at 14.25 GHz, and a gain compression level of 3 dB.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; microwave power transistors; power HEMT; AlGaN-GaN; HEMT; Ku-band applications; frequency 12 GHz to 18 GHz; high electron mobility transistors; microwave power devices; power added efficiency; size 12 mm; voltage 30 V; Aluminum gallium nitride; Fabrication; Frequency; Gallium nitride; HEMTs; Microwave devices; Packaging; Power generation; Silicon carbide; Voltage;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412675
