Title :
A 9.5–10.5GHz 60W AlGaN/GaN HEMT for X-band high power application
Author :
Yamamoto, T. ; Mitani, E. ; Inoue, K. ; Nishi, M. ; Sano, S.
Author_Institution :
Eudyna devices Inc., Yamanashi
Abstract :
In this paper, we report our result of a 60W AlGaN/GaN HEMT with the operating frequency in X-band. The device technology is extension of well-established Eudyna commercial L-/S-band AlGaN/GaN HEMT technology. The device shows output power of over 60W and a high linear gain of 9.6dB in wide frequency range of 9.5-10.5GHz, operating at 40 V drain bias voltage with the pulsed conditions at a duty of 10% with a pulse width of 100 musec. The results show the developed 60W AlGaN/GaN HEMT has high power capability covering practical frequency range for X-band high power applications with proven device technology.
Keywords :
aluminium compounds; gallium compounds; high electron mobility transistors; microwave transistors; semiconductor technology; AlGaN-GaN; Eudyna commercial L-/S-band technology; HEMT; X-band high power application; frequency 9.5 GHz to 10.5 GHz; gain 9.6 dB; power 60 W; time 100 mus; voltage 40 V; Aluminum gallium nitride; Fabrication; Frequency; Gain; Gallium nitride; HEMTs; Packaging; Power generation; Space vector pulse width modulation; Voltage;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412676
