Title :
Short-channel vertical NMOSFETs for high density fast SRAMs
Author :
Perera, A.H. ; Lage, C.S. ; Hayden, J.D. ; Jung-Hui Lin ; Rodriguez, R. ; Ajuria, S.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
Abstract :
Vertical NMOSFETs with /spl sim/0.3 /spl mu/m channel lengths and 105 /spl Aring/ gate oxide providing current drives of 445 (/spl mu/A/spl mu/m) for V/sub G/=4, V/sub D/=3.3 V, with well controlled short channel (DIBL=44 mV/V) and sub-threshold behavior (slope=88 mV/dec.) have been fabricated. Gate oxide integrity, the effect of arsenic and antimony as buried layer dopants and the symmetry of operation are discussed.<>
Keywords :
BiCMOS memory circuits; MOSFET; SRAM chips; buried layers; 0.3 micron; 105 A; Si:As; Si:Sb; buried layer dopants; gate oxide integrity; high density fast SRAMs; n-channel MOSFET; operation symmetry; short-channel vertical NMOSFET; static RAM; subthreshold behavior; Capacitance; Etching; Fabrication; Laboratories; MOSFET circuits; Product development; Random access memory; Silicon; Thermal resistance; Voltage;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383279
