DocumentCode :
2524838
Title :
A kW-class AlGaN/GaN HEMT pallet amplifier for S-band high power application
Author :
Mitani, E. ; Aojima, M. ; Sano, S.
Author_Institution :
Eudyna Devices Inc., Yamanashi
fYear :
2007
fDate :
8-10 Oct. 2007
Firstpage :
176
Lastpage :
179
Abstract :
We developed a kW-class AlGaN/GaN HEMT pallet amplifier operating at S-band. The pallet amplifier consists of an internally partial-matched AlGaN/GaN HEMT optimized for S-band on a copper base with soft PC boards. The developed pallet amplifier showed excellent performance, which is output power of over 800 W, high linear gain of 13.6dB and high efficiency of 52% over the wide frequency range of 2.9-3.3 GHz, operating at 65 V drain voltage with the pulsed condition at a duty of 10% and a pulse width of 200 musec. With 80 V drain voltage operation the peak power reached to 1 kW with 49.5% drain efficiency and 14.1 dB linear gain at 3.2 GHz. To the best of our knowledge, this is the highest power pallet amplifier ever reported for S-band.
Keywords :
III-V semiconductors; UHF amplifiers; aluminium compounds; gallium compounds; high electron mobility transistors; microwave amplifiers; wide band gap semiconductors; AlGaN; HEMT Pallet amplifier; drain voltage; gain 13.6 dB; high power application; voltage 65 V; Aluminum gallium nitride; Copper; Gain; Gallium nitride; HEMTs; High power amplifiers; Power generation; Pulse amplifiers; Space vector pulse width modulation; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
Type :
conf
DOI :
10.1109/EMICC.2007.4412677
Filename :
4412677
Link To Document :
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