Effect of thin polyimide film on performance of AlN/SiO2/Si SAW device

Author

Trang Hoang ; Rey, Patrice ; Vaudaine, M.-H. ; Benech, Ph

Author_Institution

Heterogeneous Silicon Integration Dept., CEA, Grenoble

fYear

2008

fDate

June 22 2008-April 25 2008

Firstpage

21

Lastpage

24

Abstract

The design, modeling and characterization of SAW device are presented. The attenuation rate of polyimide absorber is proportional to the length and the thickness of the absorber film. With thin polyimide films (95 nm), the wave attenuation effects of polyimide films are almost removed. Besides, the thin polyimide film seems to affect the center frequency a little, in which the center frequency is proportional to the length of thin polyimide film. So, because of the limitation of the device size, to increase the attenuation rate of the reflected wave, the thickness of the absorber film must been increased.

Keywords

III-V semiconductors; acoustic wave propagation; acoustic wave reflection; aluminium compounds; elemental semiconductors; polymer films; silicon; silicon compounds; surface acoustic wave devices; AlN-SiO₂-Si; AlN/SiO₂/Si SAW device; attenuation rate; center frequency; film length; film thickness; polyimide absorber; reflected wave; size 95 nm; thin polyimide film; Acoustic transducers; Acoustic waves; Attenuation; Frequency; Optical films; Piezoelectric transducers; Polyimides; Semiconductor films; Substrates; Surface acoustic wave devices;

fLanguage

English

Publisher

ieee

Conference_Titel

Research in Microelectronics and Electronics, 2008. PRIME 2008. Ph.D.

Conference_Location

Istanbul

Print_ISBN

978-1-4244-1983-8

Electronic_ISBN

978-1-4244-1984-5

Type

conf

DOI

10.1109/RME.2008.4595715

Filename

4595715