Title :
Effect of thin polyimide film on performance of AlN/SiO2/Si SAW device
Author :
Trang Hoang ; Rey, Patrice ; Vaudaine, M.-H. ; Benech, Ph
Author_Institution :
Heterogeneous Silicon Integration Dept., CEA, Grenoble
fDate :
June 22 2008-April 25 2008
Abstract :
The design, modeling and characterization of SAW device are presented. The attenuation rate of polyimide absorber is proportional to the length and the thickness of the absorber film. With thin polyimide films (95 nm), the wave attenuation effects of polyimide films are almost removed. Besides, the thin polyimide film seems to affect the center frequency a little, in which the center frequency is proportional to the length of thin polyimide film. So, because of the limitation of the device size, to increase the attenuation rate of the reflected wave, the thickness of the absorber film must been increased.
Keywords :
III-V semiconductors; acoustic wave propagation; acoustic wave reflection; aluminium compounds; elemental semiconductors; polymer films; silicon; silicon compounds; surface acoustic wave devices; AlN-SiO2-Si; AlN/SiO2/Si SAW device; attenuation rate; center frequency; film length; film thickness; polyimide absorber; reflected wave; size 95 nm; thin polyimide film; Acoustic transducers; Acoustic waves; Attenuation; Frequency; Optical films; Piezoelectric transducers; Polyimides; Semiconductor films; Substrates; Surface acoustic wave devices;
Conference_Titel :
Research in Microelectronics and Electronics, 2008. PRIME 2008. Ph.D.
Conference_Location :
Istanbul
Print_ISBN :
978-1-4244-1983-8
Electronic_ISBN :
978-1-4244-1984-5
DOI :
10.1109/RME.2008.4595715
