Very long wavelength infrared (VLWIR) Hg:Cd:Te photovoltaic detectors for remote sensing and ballistic missile defense applications

Author

Jha, A.R.

Author_Institution

Jha Tech. Consulting Services, Cerritos, CA, USA

fYear

2002

fDate

26-26 Sept. 2002

Firstpage

255

Lastpage

256

Abstract

This paper reveals critical design parameters of VLWIR HgCdTe photovoltaic (PV) detectors best suited for remote sensing and ballistic missile defense applications. Infrared sensors using photoconductive (PC) devices have limited performance capabilities. PV HgCdTe detectors offer much higher impedance and lower low frequency noise compared to PC detectors and do not require DC bias power. The compositional control and optimum detector architecture of VLWIR detectors are identified to achieve very large cutoff wavelength capability, most ideal for remote sensing and BMD applications.

Keywords

II-VI semiconductors; cadmium compounds; infrared detectors; mercury compounds; military equipment; missiles; remote sensing; BMD applications; HgCdTe; HgCdTe VLWIR photovoltaic detectors; PC devices; PV detector impedance/low frequency noise; ballistic missile defense applications; compositional control; infrared sensors; optimum detector architecture; photoconductive devices; remote sensing applications; very large cutoff wavelength capability; very long wavelength infrared photovoltaic detectors; Cryogenics; Dark current; Infrared detectors; Low-frequency noise; Missiles; Molecular beam epitaxial growth; Photonic band gap; Photovoltaic systems; Remote sensing; Solar power generation;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-7423-1

Type

conf

DOI

10.1109/ICIMW.2002.1076181

Filename

1076181