Title :
Dielectric isolated FinFETs on bulk substrate
Author :
Lu, D. ; Kangguo Cheng ; Morin, P. ; Loubet, N. ; Hook, T. ; Dechao Guo ; Khakifirooz, A. ; Oldiges, P. ; Doris, B. ; Ken Rim ; Jacob, A. ; Huiming Bu ; Khare, M.
Author_Institution :
IBM Res., Albany, NY, USA
Abstract :
Dielectric Isolated (DI) FinFETs exhibit superior electrostatic control compared to bulk FinFET without needing heavy sub-fin punchthrough stop doping, which increases device variability. Bottom oxidation through STI (BOTS) [1] and silicon-on-nothing (SON) are viable techniques to fabricate DI FinFETs on inexpensive bulk substates, as alternative to SOI substrate. In this paper we analyze DI FinFETs in terms of mechanical stress, transport, electrostatics and parasitic capacitances.
Keywords :
MOSFET; capacitance; electrostatics; oxidation; silicon-on-insulator; thermal stresses; SOI substrate; bottom oxidation through STI; bulk substrate; dielectric isolated FinFETs; electrostatics; mechanical stress; parasitic capacitances; silicon-on-nothing FinFET process; transport properties; Dielectrics; FinFETs; Logic gates; Oxidation; Silicon; Stress; Substrates;
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
Conference_Location :
Millbrae, CA
DOI :
10.1109/S3S.2014.7028188
