Title :
Comparative study of shot-noise models for HBTs
Author :
Rudolph, Matthias ; Heymann, Peter
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfreqiienztech. (FBH), Berlin
Abstract :
Although the shot-noise sources in bipolar transistors are strongly correlated, it is highly desirable for several reasons to rely on an approximative model that requires only noncorrelated sources. The two common topologies employing either two noncorrelated noise-current sources, or a noise-voltage and a noise-current source, are analytically analyzed and experimentally compared for the example of a GalnP/GaAs HBT. Differences and limitations of the two models are discussed, and it is shown how the topology can be modified in order to formulate a model based on noncorrelated sources that is accurate up to the transit frequency.
Keywords :
heterojunction bipolar transistors; network topology; HBT; approximative model; bipolar transistors; noise-current sources; shot-noise models; transit frequency; Bipolar integrated circuits; Bipolar transistors; Frequency measurement; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit modeling; Integrated circuit noise; Performance analysis; Semiconductor device modeling; Topology;
Conference_Titel :
Microwave Integrated Circuit Conference, 2007. EuMIC 2007. European
Conference_Location :
Munich
Print_ISBN :
978-2-87487-002-6
DOI :
10.1109/EMICC.2007.4412681
