DocumentCode
252494
Title
Energy efficiency benefits of subthreshold-optimized transistors for digital logic
Author
Grossmann, P.J. ; Vitale, S.A. ; Wyatt, P.W.
Author_Institution
MIT Lincoln Lab., Lexington, MA, USA
fYear
2014
fDate
6-9 Oct. 2014
Firstpage
1
Lastpage
2
Abstract
Using a simulation-based approach, the energy efficiency of the MIT Lincoln Laboratory xLP process was benchmarked against two commercial low power process technologies for a ~40,000 gate DES enryption circuit to demonstrate the benefits of subthreshold-optimized transistors for minimum energy circuit design. Because the transistors are tuned for low voltage operation, the xLP process performs best relative to other technologies at subthreshold supply voltages, where most circuits achieve their minimum energy point. With 90nm feature sizes, the xLP process at showed a 57% percent energy efficiency improvement vs. IBM 90nm technology and a 9% energy efficiency improvement vs. IBM 65 nm. Scaling the xLP process to 65 nm should provide further energy efficiency benefit.
Keywords
application specific integrated circuits; circuit optimisation; cryptography; integrated logic circuits; low-power electronics; silicon-on-insulator; transistors; DES encryption circuit; IBM technology; application-specific ICs; digital logic; efficiency 57 percent; efficiency 9 percent; energy efficiency improvement; extreme low power process; fully-depleted silicon-on-insulator processes; low voltage operation; minimum energy circuit design; size 65 nm; size 90 nm; subthreshold-optimized transistors; Clocks; Delays; Encryption; Energy efficiency; Libraries; Standards; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
Conference_Location
Millbrae, CA
Type
conf
DOI
10.1109/S3S.2014.7028191
Filename
7028191
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