Quantum mechanical modeling of the charge distribution Si/Si/sub 1-x/Ge/sub x/Si p-channel MOSFET

Incorporation of a Si/sub 1-x/Ge/sub x/ alloy layer in the channel of a p-channel MOSFET has been proposed as a means to improve device performance. In order to achieve optimal performance in such a device, the inversion charge distribution must be located in the alloy channel layer where the carrier mobility is highest. The smaller bandgap of the Si/sub 1-x/Ge/sub x/ alloy layer, compared to Si, creates a potential well in which the carriers can reside. Understanding how the carriers distribute themselves under various gate bias conditions is necessary in order to achieve optimal device design. The authors´ aim is to demonstrate the dependence of the charge distribution in a Si/Si/sub 1-x/Ge/Si p-channel MOSFET based on the self-consistent solution of the Schrodinger-Poisson equations.<>