A Practical Approach to Enhance Yield of OPTVLD Products

Author

Junji Cheng ; Xingbi Chen

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices of China, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

34

Issue

2

fYear

2013

fDate

Feb. 2013

Firstpage

289

Lastpage

291

Abstract

In the prior art of the optimum variation lateral doping (OPTVLD) technique, the dose deviations between designs and products should be tightly controlled to achieve the eligible breakdown voltages (BVs); however, an approach presented in this letter overcomes this shortcoming without any penalty. Its physical explanation is discussed, and the simulations show that, through using this approach, the allowed dose-deviation range is relaxed from about ±1.5% to about ±5%, which can significantly enhance the yield over the existing state of the art. As a result, at an artificial dose-deviation rate of ±5 %, the OPTVLD products with the high yield of 94.4 % are first fabricated in the BiCMOS process, and the measured maximal BV of 1000 V corresponds very well to the ideal value of 1090 V.

Keywords

BiCMOS integrated circuits; electric breakdown; semiconductor doping; BiCMOS process; OPTVLD products; artificial dose deviation rate; breakdown voltages; optimum variation lateral doping technique; voltage 1090 V; Art; BiCMOS integrated circuits; Doping; Junctions; Proposals; Semiconductor process modeling; Substrates; Dose deviation; optimum variation lateral doping (OPTVLD); yield;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2230607

Filename

6407722