Title :
Stimulated THz emission from Si:P and Si:Bi under resonant intracenter optical pumping
Author :
Hovenier, J.N. ; Klaassen, T.O. ; Zhukavin, R.K. ; Gaponova, D.M. ; Muravjov, A.V. ; Orlova, E.E. ; Shastin, V.N. ; Pavlov, S.G. ; Hubers, Heinz-Wilhelm ; Riemann, H. ; van der Meer, A.F.G.
Author_Institution :
Delft Univ. of Technol., Netherlands
Abstract :
Frequency tunable radiation from the free electron laser FELIX was used to excite neutral phosphorus and bismuth donors embedded in bulk monocrystalline silicon. Lasing at terahertz frequencies has been observed at liquid helium temperature under resonant pumping of odd parity impurity states.
Keywords :
bismuth; elemental semiconductors; impurity states; optical pumping; phosphorus; semiconductor lasers; silicon; stimulated emission; 4.2 K; Si:Bi; Si:P; bulk monocrystalline silicon; frequency tunable radiation; lasing; neutral bismuth donors; neutral phosphorus donors; odd parity impurity states; resonant intracenter optical pumping; resonant pumping; stimulated emission; terahertz frequencies; Bismuth; Free electron lasers; Frequency; Helium; Laser excitation; Optical pumping; Pump lasers; Resonance; Silicon; Tunable circuits and devices;
Conference_Titel :
Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on
Conference_Location :
San Diego, CA, USA
Print_ISBN :
0-7803-7423-1
DOI :
10.1109/ICIMW.2002.1076189
