Pressure dependence of electron tunneling transmission in GaAs/AlAs multiple barrier heterostructures

We propose a set of boundary conditions for electron enveloping wave functions at GaAs/AlAs (100) heterointerfaces, taking into account not only Γ-χ mixing, but also interaction χ1-χ3 of bands of AlAs in effective masses approach. The proposed conditions have allowed dependences of the mixing effect upon the parity of monolayer number in AlAs barriers to be obtained and applied stress. The calculations have shown, that the pressure results in a significant displacement of χ-resonances and increase of splitting magnitude of twin χ-peaks which is caused by interaction with Γ-peak. The movement of a Γ1 resonance is stipulated by dependence of effective masses of Γ-valley on strain