Optimization of surface acoustic wave induced birefringence in an InGaAs-GaAs acousto-optic modulator

Author

Wang, X.T. ; Jain, F.C.

Author_Institution

Electr. & Comput. Eng. Dept., Connecticut Univ., Storrs, CT, USA

fYear

2002

fDate

26-26 Sept. 2002

Firstpage

273

Lastpage

274

Abstract

A theoretical method to simulate the birefringence induced by asymmetric strain and electric field in multiple quantum well structures (MQWs) is presented. In the presence of surface acoustic waves (SAW), the strain-induced band mixing in MQWs results in refractive index changes as a function of the polarization of incidence beam normal to the quantum well plane. Band mixing is sensitive to the well structure and intrinsic strain in MQWs. In this paper, we investigate the influence of various parameters on the birefringence in the InGaAs-GaAs quantum wells, and optimize the design of our acoustic-optic modulator operating near 980 nm.

Keywords

III-V semiconductors; acousto-optical modulation; birefringence; gallium arsenide; indium compounds; quantum well devices; refractive index; surface acoustic wave devices; 980 nm; InGaAs-GaAs; MQWs; acousto-optic modulator; asymmetric strain; electric field; incidence beam; quantum well plane; refractive index changes; strain-induced band mixing; surface acoustic wave induced birefringence; well structure; Acoustic beams; Acoustic waves; Birefringence; Capacitive sensors; Design optimization; Polarization; Quantum mechanics; Quantum well devices; Refractive index; Surface acoustic waves;

fLanguage

English

Publisher

ieee

Conference_Titel

Infrared and Millimeter Waves, 2002. Conference Digest. Twenty Seventh International Conference on

Conference_Location

San Diego, CA, USA

Print_ISBN

0-7803-7423-1

Type

conf

DOI

10.1109/ICIMW.2002.1076190

Filename

1076190