A novel salicide process (SEDAM) for sub-quarter micron CMOS devices

Author

Mogami, T. ; Wakabayashi, H. ; Saito, Y. ; Matsuki, T. ; Tatsumi, T. ; Kunio, T.

Author_Institution

Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

687

Lastpage

690

Abstract

A new salicide process, featuring selective silicon deposition and subsequent pre-amorphization (SEDAM), has been developed for sub-quarter micron CMOS devices. Non-doped silicon films were selectively deposited on gate and source/drain regions to avoid silicidation suppression due to heavily-doped As. Furthermore, silicidation was enhanced by pre-amorphization on the narrow gate and source/drain regions. TiSi/sub 2/ films, with a sheet resistance of /spl les/10 /spl Omega/sq., were stably and uniformly formed on all n/sup +/- and p/sup +/-poly-Si and source/drain diffusion layers for 0.15 /spl mu/m CMOS devices without degradation in the I-V characteristics.<>

Keywords

CMOS integrated circuits; MOSFET; amorphisation; chemical vapour deposition; integrated circuit interconnections; 0.15 mum; I-V characteristics; MOSFETs; SEDAM; Si:As; TiSi/sub 2/ films; TiSi/sub 2/-Si; gate region; n/sup +/-polysilicon; p/sup +/-polysilicon; preamorphization; salicide process; selective Si deposition; sheet resistance; silicidation; source/drain diffusion layers; source/drain regions; sub-quarter micron CMOS devices; CMOS process; CMOS technology; Fabrication; MOSFETs; Microelectronics; Semiconductor films; Silicidation; Silicides; Silicon; Surface resistance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383290

Filename

383290