SiGe V-band 1:32 frequency divider using dynamic and static division stages

In this paper, we present a fully integrated differential, compact frequency divider with a divide ratio of 32. The circuit utilizes a Si/SiGe 0.25 mum BiCMOS technology and operates beyond 75 GHz. The divider has a die area of 655 mum times 475 mum and consumes 202 mA at 5 V supply voltage. The frequency divider consists of the first stage of a dynamic divider with transimpedance topology and a static divider for the following four stages. The dynamic frequency divider operates from 22 GHz to 93 GHz with 5 V voltage supply and consumes 35 mA current. The static frequency divider operates up to 50 GHz and consumes 43 mA.