Nondestructive contactless measurement of bulk lifetime and surface recombination using single pass infrared free carrier absorption

Author

Giles, F.P. ; Sanii, F. ; Schwartz, R.J. ; Gray, J.L.

Author_Institution

Sch. of Electr. Eng., Purdue Univ., West Lafayette, IN, USA

fYear

1991

fDate

7-11 Oct 1991

Firstpage

223

Abstract

The measurement of bulk lifetime and surface recombination velocities of solar-cell-grade silicon wafers using the modulated free carrier absorption technique is discussed. The results of a comparison of the effective lifetime of a silicon wafer as measured by the inductively coupled photoconductive decay method and the bulk lifetime and the surface recombination velocity as measured using the single-pass free carrier absorption method are presented and compared. The free carrier method is shown to allow the separation of the recombination into its bulk and surface components without the need to modify or destroy the sample

Keywords

electron-hole recombination; elemental semiconductors; silicon; solar cells; surface electron states; Si solar cells; bulk lifetime; inductively coupled photoconductive decay method; nondestructive contactless measurement; semiconductor; single pass infrared free carrier absorption; surface recombination; Amplitude modulation; Electromagnetic wave absorption; Laser beams; Laser excitation; Monitoring; Photoconductivity; Probes; Silicon; Velocity measurement; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1991., Conference Record of the Twenty Second IEEE

Conference_Location

Las Vegas, NV

Print_ISBN

0-87942-636-5

Type

conf

DOI

10.1109/PVSC.1991.169213

Filename

169213