Double-ended tuning fork resonator in 0.35um CMOS technology for RF applications

Author

Lopez, J.L. ; Torres, F. ; Murillo, G. ; Giner, J. ; Teva, J. ; Verd, J. ; Uranga, A. ; Abadal, G. ; Barniol, N.

Author_Institution

Dept. Eng. Electron., Univ. Autonoma de Barcelona (UAB), Barcelona

fYear

2008

fDate

June 22 2008-April 25 2008

Firstpage

89

Lastpage

92

Abstract

A double-ended tuning fork (DETF) fabricated in a 0.35 um commercial CMOS technology is presented. Resonator performance for the application of this device in a RF front-end is measured using electrical test. DEFT offers a higher isolation between ports than clamped -clamped beams and the possibility to create a band-pass for frequency filtering or mixing using a single resonator. Discrepancies between expected and obtained results are studied using FEM mechanical simulations.

Keywords

CMOS digital integrated circuits; band-pass filters; finite element analysis; micromechanical resonators; mixers (circuits); CMOS technology; DEFT; FEM mechanical simulations; RF application; band-pass frequency filtering; clamped beams; double-ended tuning fork resonator; Bandwidth; CMOS process; CMOS technology; Fabrication; Micromechanical devices; Radio frequency; Resonance; Resonant frequency; Resonator filters; Vibrations;

fLanguage

English

Publisher

ieee

Conference_Titel

Research in Microelectronics and Electronics, 2008. PRIME 2008. Ph.D.

Conference_Location

Istanbul

Print_ISBN

978-1-4244-1983-8

Electronic_ISBN

978-1-4244-1984-5

Type

conf

DOI

10.1109/RME.2008.4595732

Filename

4595732