Title :
A 47 GHz bipolar process with an ultra shallow ion implanted base of 35 nm
Author :
Mahnkopf, R. ; Bianco, M. ; Klose, H.
Author_Institution :
Corp. Res. & Dev., Siemens AG, Munich, Germany
Abstract :
Based on the bipolar process B6HF/1/l a scaled down version-further on denoted as B6HF*-was developed featuring 47 GHz cutoff-frequency for a 0.3 /spl mu/m effective emitter size transistor. To obtain this performance aggressive implantation and thermal budget strategies had been set up. The transistor base width has been reduced down to 35 nm, the lowest value ever reported for a conventional implanted base. Investigations with respect to process and device stability.<>
Keywords :
BiCMOS integrated circuits; hybrid integrated circuits; integrated circuit manufacture; ion implantation; 0.3 /spl mu/m effective emitter size transistor; 0.3 mum; 35 nm; 47 GHz bipolar process; 47 GHz cutoff-frequency; BiCMOS IC fabrication; aggressive implantation; bipolar process; device stability; thermal budget strategies; transistor base width; ultra shallow ion implanted base; Batteries; CMOS process; Delay; Energy consumption; Implants; Ion implantation; Metallization; Rapid thermal processing; Research and development; Stability;
Conference_Titel :
Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-2111-1
DOI :
10.1109/IEDM.1994.383298
