Recent advances in SOI technology

Author

Colinge, J.-P.

Author_Institution

Microelectron. Lab., Univ. Catholique de Louvain, Belgium

fYear

1994

fDate

11-14 Dec. 1994

Firstpage

817

Lastpage

820

Abstract

The flexibility provided by full dielectric isolation and the quasi-ideal properties of the SOI MOSFET (sharp subthreshold slope, low body-effect coefficient, ...) have given rise to new fields of applications for SOI devices. Beside high-temperature and radiation hard niche applications, SOI technology is now increasingly used for the fabrication of low-voltage, low-power CMOS circuits, high-frequency (microwave) devices, and power devices. Some novel SOI devices have been recently reported as well.<>

Keywords

CMOS integrated circuits; radiation effects; radiation hardening (electronics); silicon-on-insulator; SOI MOSFET; SOI devices; SOI technology; full dielectric isolation; high-frequency microwave devices; low body-effect coefficient; low-power CMOS circuits; low-voltage; power devices; quasi-ideal properties; radiation hard niche applications; sharp subthreshold slope; BiCMOS integrated circuits; Bipolar transistors; Capacitance; Dielectric substrates; Fabrication; Immune system; Isolation technology; MOSFET circuits; Silicon; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1994. IEDM '94. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-2111-1

Type

conf

DOI

10.1109/IEDM.1994.383299

Filename

383299