• DocumentCode
    2525294
  • Title

    Comparison of Ritz and finite element method for stress analysis of silicon elastic elements

  • Author

    Gridchin, V.A. ; Lee, J.H. ; Gridchin, A.V. ; Gribov, V.A. ; Berdinsky, A.S. ; Shaporin, A.V.

  • Author_Institution
    Novosibirsk State Tech. Univ., Russia
  • Volume
    2
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    647
  • Abstract
    The results of elastic element (EE) modeling by the Ritz variational method (RVM) for the silicon pressure sensors are compared with the results by the finite element method (FEM) using program package such as ANSYS. The influence of types of the shape functions in RVM for the analysis of the deflection and stress distributions on rectangular diaphragms is studied for 1⩽m⩽5 where size ratio m=a/b. The comparison of calculated results of the deflection and stress distribution by RVM with those by FEM shows little difference for m=1, but for m>2 all kinds of the shape functions give errors, for example with Hermite polynomials, such as a saddle form on deflection distribution. For m⩽2 the difference by the two methods is less than 10%. For the evaluation of displacement of piezoresistors at the most interesting points on the diaphragm, the RVM shows that the deflection and stress distribution can be estimated easily and accurately
  • Keywords
    diaphragms; elastic deformation; elemental semiconductors; finite element analysis; piezoresistive devices; pressure sensors; silicon; stress analysis; variational techniques; ANSYS package; FEM; Ritz variational method; Si; Si elastic elements; Si pressure sensors; deflection; finite element method; mechanical stresses; piezoresistive sensors; rectangular diaphragms; shape functions; stress analysis; stress distributions; Electronic mail; Finite element methods; Gas detectors; Mechanical sensors; Packaging; Piezoresistive devices; Polynomials; Shape; Silicon; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Science and Technology, 1999. KORUS '99. Proceedings. The Third Russian-Korean International Symposium on
  • Conference_Location
    Novosibirsk
  • Print_ISBN
    0-7803-5729-9
  • Type

    conf

  • DOI
    10.1109/KORUS.1999.876248
  • Filename
    876248