Title :
Effect of electrostatic bonding on the characteristics of silicon diaphragm pressure transducer
Author :
Spoutai, S.V. ; Berdinsky, A.S. ; Chun, H.-G. ; Lee, J.H.
Author_Institution :
Novosibirsk State Tech. Univ., Russia
Abstract :
The effect of electrostatic bonding on the resistance and its temperature coefficient of the polysilicon highly doped piezoresistors is considered. The resistors are on the surface of anisotropically etched silicon diaphragms of different thickness. It is shown that changes of the resistance and temperature coefficient of the resistance cannot be accounted for solely by the mechanical stresses/strains at the silicon-glass interface. The residual thermo-mechanical stresses at the silicon-silicon thermal oxide interface are, probably, an issue. The effects of bonding on the R and TCR decreases as the thickness of diaphragm is increased
Keywords :
diaphragms; elemental semiconductors; internal stresses; piezoresistive devices; pressure transducers; silicon; thermal stresses; Si; Si diaphragm pressure transducer; Si-glass interface; anisotropically etched Si diaphragms; diaphragm thickness; electrostatic bonding; mechanical strains; mechanical stresses; polysilicon highly doped piezoresistors; residual thermo-mechanical stresses; resistance; silicon-silicon thermal oxide interface; temperature coefficient; Anisotropic magnetoresistance; Bonding; Electrostatics; Etching; Piezoresistive devices; Resistors; Silicon; Surface resistance; Temperature; Thermal stresses;
Conference_Titel :
Science and Technology, 1999. KORUS '99. Proceedings. The Third Russian-Korean International Symposium on
Conference_Location :
Novosibirsk
Print_ISBN :
0-7803-5729-9
DOI :
10.1109/KORUS.1999.876249
