Effect of electrostatic bonding on the characteristics of silicon diaphragm pressure transducer

Author

Spoutai, S.V. ; Berdinsky, A.S. ; Chun, H.-G. ; Lee, J.H.

Author_Institution

Novosibirsk State Tech. Univ., Russia

Volume

2

fYear

1999

fDate

1999

Firstpage

653

Abstract

The effect of electrostatic bonding on the resistance and its temperature coefficient of the polysilicon highly doped piezoresistors is considered. The resistors are on the surface of anisotropically etched silicon diaphragms of different thickness. It is shown that changes of the resistance and temperature coefficient of the resistance cannot be accounted for solely by the mechanical stresses/strains at the silicon-glass interface. The residual thermo-mechanical stresses at the silicon-silicon thermal oxide interface are, probably, an issue. The effects of bonding on the R and TCR decreases as the thickness of diaphragm is increased

Keywords

diaphragms; elemental semiconductors; internal stresses; piezoresistive devices; pressure transducers; silicon; thermal stresses; Si; Si diaphragm pressure transducer; Si-glass interface; anisotropically etched Si diaphragms; diaphragm thickness; electrostatic bonding; mechanical strains; mechanical stresses; polysilicon highly doped piezoresistors; residual thermo-mechanical stresses; resistance; silicon-silicon thermal oxide interface; temperature coefficient; Anisotropic magnetoresistance; Bonding; Electrostatics; Etching; Piezoresistive devices; Resistors; Silicon; Surface resistance; Temperature; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Science and Technology, 1999. KORUS '99. Proceedings. The Third Russian-Korean International Symposium on

Conference_Location

Novosibirsk

Print_ISBN

0-7803-5729-9

Type

conf

DOI

10.1109/KORUS.1999.876249

Filename

876249