Title :
28 nm FD SOI Technology Platform RF FoM
Author :
Esfeh, B.K. ; Kilchytska, V. ; Barral, V. ; Planes, N. ; Haond, M. ; Flandre, D. ; Raskin, J.-P.
Author_Institution :
ICTEAM, Univ. catholique de Louvain, Louvain-la-Neuve, Belgium
Abstract :
This work provides a detailed study of 28 nm fully-depleted silicon-on-insulator (FD SOI) ultra-thin body and buried oxide (BOX) (UTBB) MOSFETs for high frequency applications. RF figures of merit (FoM), i.e. the current gain cut-off frequency (fT) and the maximum oscillation frequency (fmax), are presented for different transistor geometries. The parasitic gate and source/drain series resistances, as well as capacitances and their effect on RF performance are analyzed.
Keywords :
MOSFET; silicon-on-insulator; BOX UTBB metal oxide semiconductor field effect transistor; FD SOI technology platform; RF FoM; current gain cut-off frequency; fully-depleted silicon-on-insulator; high frequency application; oscillation frequency; parasitic gate; radiofrequency figure of merit; size 28 nm; source-drain series resistance; transistor geometry; ultrathin body and buried oxide MOSFET; Capacitance; Equivalent circuits; Fingers; Logic gates; MOSFET; Market research; Radio frequency; FD-SOI MOSFET; RF FIGURES OF MERIT; UTBB;
Conference_Titel :
SOI-3D-Subthreshold Microelectronics Technology Unified Conference (S3S), 2014 IEEE
Conference_Location :
Millbrae, CA
DOI :
10.1109/S3S.2014.7028208
